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A model of high-and low-temperature phosphorus diffusion in silicon by a dual pair mechanism

✍ Scribed by O. V. Aleksandrov


Book ID
110128527
Publisher
Springer
Year
2001
Tongue
English
Weight
123 KB
Volume
35
Category
Article
ISSN
1063-7826

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## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.