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Kinetics and mechanism of low-pressure, high-temperature oxidation of silicon-II

โœ Scribed by C. Gelain; A. Cassuto; P. Goff


Publisher
Springer-Verlag
Year
1971
Tongue
English
Weight
537 KB
Volume
3
Category
Article
ISSN
0030-770X

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๐Ÿ“œ SIMILAR VOLUMES


Kinetics and mechanism of low-temperatur
โœ E.V. Kasatkin; A.A. Rakov ๐Ÿ“‚ Article ๐Ÿ“… 1965 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 708 KB

The processes of the electrolysis of HaSO solutions on a cooled Pt anode have been investigated in the potential range from 3 to 12 V. HpSaOs formation is inhibited at the potential 4 V, the evolution of Ot is inhibited near 5 V and the synthesis of O8 is inhibited near 8.5 V. The processes of inhib