✦ LIBER ✦

Kinetics and Mechanism of Transient Thermal Oxidation of Silicon

✍ Scribed by Parkhutik, V. P. ;Labunov, V. A. ;Chigir, G. G.

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 455 KB
Volume: 96
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210960102

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Kinetics and mechanism of thermal oxidat

Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects

✍ A.G. Revesz; R.J. Evans 📂 Article 📅 1968 🏛 Elsevier Science 🌐 English ⚖ 225 KB

Thermal Oxidation of Silicon: Growth Mec

Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties

✍ A. G. Revesz 📂 Article 📅 1967 🏛 John Wiley and Sons 🌐 English ⚖ 620 KB

Mechanism of oxide deformation during si

Mechanism of oxide deformation during silicon thermal oxidation

✍ H. Kageshima; M. Uematsu; K. Akagi; S. Tsuneyuki; T. Akiyama; K. Shiraishi 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 127 KB

Kinetics and mechanism of low-pressure,

Kinetics and mechanism of low-pressure, high-temperature oxidation of silicon-II

✍ C. Gelain; A. Cassuto; P. Goff 📂 Article 📅 1971 🏛 Springer-Verlag 🌐 English ⚖ 537 KB

Kinetics and mechanism of pyrite oxidati

Kinetics and mechanism of pyrite oxidation

✍ Ž.D. Živković; N. Milosavljević; J. Šesták 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 260 KB

Kinetics of thermal growth of thin silic

Kinetics of thermal growth of thin silicon oxide films

✍ G.C. Sarti; F. Santarelli; G. Camera Roda 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order