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Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties

โœ Scribed by A. G. Revesz


Publisher
John Wiley and Sons
Year
1967
Tongue
English
Weight
620 KB
Volume
19
Category
Article
ISSN
0370-1972

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๐Ÿ“œ SIMILAR VOLUMES


Kinetics of thermal growth of thin silic
โœ G.C. Sarti; F. Santarelli; G. Camera Roda ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order