Properties of silicon-anodic oxide interfaces
โ Scribed by Nannoni, B.
- Publisher
- John Wiley and Sons
- Year
- 1970
- Tongue
- English
- Weight
- 877 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Silicon Oxidation Techniques One of the properties that makes silicon the elephant in the zoo of semiconducting materials used in microelectronic manufacturing is the superior dielectric properties of its oxide [So1]. An SiO 2 layer can be formed by a simple thermal oxidation process in a wet (
## Abstract Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar