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Anodic oxidation of silicon carbide

✍ Scribed by G. Restelli; A. Ostidich; A. Manara

Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
334 KB
Volume
23
Category
Article
ISSN
0040-6090

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## Abstract Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar

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