The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 Β°C in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d
β¦ LIBER β¦
Mechanism of oxide deformation during silicon thermal oxidation
β Scribed by H. Kageshima; M. Uematsu; K. Akagi; S. Tsuneyuki; T. Akiyama; K. Shiraishi
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 127 KB
- Volume
- 376-377
- Category
- Article
- ISSN
- 0921-4526
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