thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order
β¦ LIBER β¦
Growth kinetics of low-temperature oxide films on silicon
β Scribed by L. I. Gurskii; V. M. Koleshko; B. S. Reznikov; I. V. Nekaryukin; A. A. Kovalevskii
- Publisher
- Springer US
- Year
- 1974
- Tongue
- English
- Weight
- 198 KB
- Volume
- 27
- Category
- Article
- ISSN
- 1573-871X
No coin nor oath required. For personal study only.
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