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A model of low temperature silicon compound material growth kinetics

✍ Scribed by Wolfgang Losch


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
498 KB
Volume
216
Category
Article
ISSN
0040-6090

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A kinetic model has been developed which accurately represents the kinetics of the oxidation of a thin film of pyrolytic carbon at a total pressure of about 100 Pa in the temperature range 748-898K. The two most important features of the mechanism are the existence of at least two distinct types of