Epitaxial growth of zinc oxide thin films on silicon

✍ Scribed by Chunming Jin; Roger Narayan; Ashutosh Tiwari; Honghui Zhou; Alex Kvit; Jagdish Narayan

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 273 KB
• Volume: 117
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.12.003

✦ Synopsis

Epitaxial zinc oxide thin films were grown on Si(1 1 1) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(1 1 1) heterostructure:

along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(1 1 1) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(1 1 1) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0 0 0 1] || MgO/TiN/Si[1 1 1] along the growth direction and ZnO[2 1 1 0] || MgO/TiN/Si[0 1 1] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission.