✦ LIBER ✦

Growth and characterization of zirconium oxide thin films on silicon substrate

✍ Scribed by P.Y. Kuei; J.D. Chou; C.T. Huang; H.H. Ko; S.C. Su

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 843 KB
Volume: 314
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.162

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✦ Synopsis

The growth and characterization of zirconium oxide (ZrO 2 ) thin films prepared by thermal oxidation of a deposited Zr metal layer on SiO 2 /Si were investigated. Uniform ZrO 2 thin film with smooth surface morphology was obtained. The thermal ZrO 2 films showed a polycrystalline structure. The dielectric constant of the ZrO 2 film has been shown to be 23, and the equivalent oxide thickness (EOT) of the ZrO 2 stacked oxide is in the range of 3.38-5.43 nm. MOS capacitors with ZrO 2 dielectric stack show extremely low leakage current density, less than 10 À 6 A/cm 2 at À 4 V. Consequently, using this method, high-quality ZrO 2 films could be fabricated at oxidation temperature as low as 600 1C.

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