Growth of thin epitaxial films

✍ Scribed by I. Markov

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 949 KB
• Volume: 28
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(83)85173-1

✦ Synopsis

A new theoretical model for prediction of the mechanism of growth of thm epitaxial films is developed. The model is not based on the classical nucleation theory as this is the case of the approach of B~WI to the problem. The thermodynamic conditions for occurrence of island growth, layer-by-layer growth, multilayer growth and Stranski-Krastanov mechanism. consisting of layer-by-layer growth followed by islands are found. The influence of the lattice misfit and the surface alloying on the mode of growth is discussed. The effect of the crystallographic orientation of the substrate is also studied. The theoretical results are applied to the case ofelectrocrystallization of metals on single crystal metalsubstrates. A comparison with experimental data is carried out whenever possible.