A new theoretical model for prediction of the mechanism of growth of thm epitaxial films is developed. The model is not based on the classical nucleation theory as this is the case of the approach of B~WI to the problem. The thermodynamic conditions for occurrence of island growth, layer-by-layer gr
โฆ LIBER โฆ
Epitaxial growth of CuO thin films by in situ oxidation of Cu thin films
โ Scribed by R. Kita; T. Hase; M. Sasaki; T. Morishita; S. Tanaka
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 364 KB
- Volume
- 115
- Category
- Article
- ISSN
- 0022-0248
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