Redistribution of Heavy Metal Impurities in Silicon by Phosphorus Diffusion
✍ Scribed by D. Knoll; A. Fischer
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 401 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase. The P‐diffusion and heavy metal segregation representing two partial processes of heavy metal gettering are discussed as a one‐ and multiple‐temperature‐time‐procedure. The heavy metal gold is selected as an example, by means of which the different temperature‐time‐regimes are compared to each hother with a view to the redistribution intensity.