✦ LIBER ✦

SIMS analysis of nitrided oxides grown on 4H-SiC

✍ Scribed by P. Tanner; S. Dimitrijev; H-F. Li; D. Sweatman; K. E. Prince; H. B. Harrison

Book ID: 107458029
Publisher: Springer US
Year: 1999
Tongue: English
Weight: 390 KB
Volume: 28
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-999-0227-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of rapid thermal annealing on ni

Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiC

✍ K.Y. Cheong; W. Bahng; N.-K. Kim 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 532 KB

Structural analysis of 4H-SiC layers gro

Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates

✍ I.P. Nikitina; R.C. Glass; E. Janzén; N.B. Guseva; A.A. Mal'tsev 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 487 KB

Characterization of 4H-SiC grown on AlN/

Characterization of 4H-SiC grown on AlN/Si(100) by CVD

✍ Z. Qin; P. Han; T.T. Han; B. Yan; N. Jiang; S. Xu; J. Shi; J. Zhu; Z.L. Xie; X.Q 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 160 KB

Structural impact of LPE buffer layer on

Structural impact of LPE buffer layer on sublimation grown 4H–SiC epilayers

✍ H. Jacobson; R. Yakimova; M. Syväjärvi; A. Kakanakova-Georgieva; T. Tuomi; E. Ja 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 337 KB

Comparative Studies of Carrier Dynamics

Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

✍ Patrik Ščajev; Jawad Hassan; Kęstutis Jarašiūnas; Masashi Kato; Anne Henry; J. P 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 522 KB

A TEM study of in-grown stacking faults

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

✍ Maya Marinova; Frederic Mercier; Alkioni Mantzari; Irina Galben; Didier Chaussen 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 299 KB

A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-