✦ LIBER ✦

Structural impact of LPE buffer layer on sublimation grown 4H–SiC epilayers

✍ Scribed by H. Jacobson; R. Yakimova; M. Syväjärvi; A. Kakanakova-Georgieva; T. Tuomi; E. Janzén

Book ID: 108341969
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 337 KB
Volume: 256
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(03)01337-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural defects and deep-level center

Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

✍ A. A. Lebedev; D. V. Davydov; N. S. Savkina; A. S. Tregubova; M. P. Shcheglov; R 📂 Article 📅 2000 🏛 Springer 🌐 English ⚖ 50 KB

Structural analysis of 4H-SiC layers gro

Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates

✍ I.P. Nikitina; R.C. Glass; E. Janzén; N.B. Guseva; A.A. Mal'tsev 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 487 KB

On the origin of aluminum-related cathod

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()

✍ S.M. Bishop; C.L. Reynolds Jr.; J.C. Molstad; F.A. Stevie; D.E. Barnhardt; R.F. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 366 KB

Structural, optical, and surface science

Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

✍ Z. C. Feng; A. Rohatgi; C. C. Tin; R. Hu; A. T. S. Wee; K. P. Se 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 645 KB

Investigation of AlN buffer layers on 6H

Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE

✍ H. Behmenburg; C. Giesen; R. Srnanek; J. Kovac; H. Kalisch; M. Heuken; R.H. Jans 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 839 KB

In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of $ 300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC and the V/III ratio was changed from 240 to 8200 on f

Sublimation epitaxy of AlN layers on 4H-

Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible

✍ M. Beshkova; Z. Zakhariev; J. Birch; A. Kakanakova; R. Yakimova 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 190 KB