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Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

✍ Scribed by A. A. Lebedev; D. V. Davydov; N. S. Savkina; A. S. Tregubova; M. P. Shcheglov; R. Yakimova; M. Syväjärvi; E. Janzén

Book ID: 110125017
Publisher: Springer
Year: 2000
Tongue: English
Weight: 50 KB
Volume: 34
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1317570

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