Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

✍ Scribed by M. Asghar; F. Iqbal; S.M. Faraz; V. Jokubavicius; Q. Wahab; M. Syväjärvi

• Book ID: 116833916
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 203 KB
• Volume: 407
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2011.08.036