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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

✍ Scribed by M. Asghar; F. Iqbal; S. Faraz; V. Jokubavicius; Q. Wahab; M. Syväjärvi

No coin nor oath required. For personal study only.

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