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Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation

✍ Scribed by Renxu Jia 贾仁需, Yuming Zhang 张玉明, Yimen Zhang

Book ID: 113085883
Publisher: Wuhan University of Technology
Year: 2012
Tongue: English
Weight: 217 KB
Volume: 27
Category: Article
ISSN: 1000-2413
DOI: 10.1007/s11595-012-0476-5

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