A study of thick 3C-SiC epitaxial layers
A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
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A. A. Lebedev; V. V. Zelenin; P. L. Abramov; E. V. Bogdanova; S. P. Lebedev; D.
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Article
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2007
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Springer
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English
β 203 KB