The effect of a SiC cap on the growth of epitaxial graphene on SiC in ultra high vacuum
✍ Scribed by Cem Çelebi; Cenk Yanık; Anıl Günay Demirkol; İsmet İ. Kaya
- Book ID
- 113514588
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 753 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0008-6223
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
An extended layer of defected SiC has been observed in SiC subjected to heat treatments at 850 and 1050 °C prior to growth of graphene by thermal decomposition. This layer is found to strongly affect the graphene thickness, surface morphology, and Raman spectrum of graphene grown on it. By comparing
## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r