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Silicon wafer processing by application of spun-on doped and undoped silica layers

✍ Scribed by J.A. Becker


Book ID
103395455
Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
637 KB
Volume
17
Category
Article
ISSN
0038-1101

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The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and b