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Silicon on insulator structures formed by ion implantation

✍ Scribed by PLF Hemment

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
143 KB
Volume
35
Category
Article
ISSN
0042-207X

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πŸ“œ SIMILAR VOLUMES

Synthesis of buried silicon oxynitride l
Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures
✍ A.D. Yadav; Rucha H. Polji; Vibha Singh; S.K. Dubey; T.K. Gundu Rao πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 252 KB

Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β€’ 10 17 , 2.5 β€’ 10 17 and 5 β€’ 10 17 ions cm Γ€2 sequentially in the ratio 1:1 at 150 keV into p-type