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Silicon-on-insulator by oxygen ion implantation

✍ Scribed by H.W. Lam; R.F. Pinizzotto


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
530 KB
Volume
63
Category
Article
ISSN
0022-0248

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Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β€’ 10 17 , 2.5 β€’ 10 17 and 5 β€’ 10 17 ions cm Γ€2 sequentially in the ratio 1:1 at 150 keV into p-type