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Study of silicon-on-insulator structures formed by low dose oxygen and nitrogen implantation

โœ Scribed by J.K.Y. Wong; J.A. Kilner


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
430 KB
Volume
12
Category
Article
ISSN
0921-5107

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## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N รท ions at a dose of 7.5ร—1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed