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Infrared analysis of buried insulator layers formed by ion implantation into silicon

✍ Scribed by J. Samitier; S. Martinez; A. El Hassani; A. Pérez-Rodríguez; J.R. Morante

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
214 KB
Volume
63
Category
Article
ISSN
0169-4332

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Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 • 10 17 , 2.5 • 10 17 and 5 • 10 17 ions cm À2 sequentially in the ratio 1:1 at 150 keV into p-type