Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

✍ Scribed by Toru Aoki; Takuya Ogishima; Aleksander M Wróbel; Yoichiro Nakanishi; Yoshinori Hatanaka

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 230 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00283-8

✦ Synopsis

Silicon nitride (SiN x ) films were prepared using an organosilicon monomer, Trisdimethyl-aminosilane ((Me 2 N) 3 SiH: TDMAS) by a remote plasma CVD. Plasma was generated by a mixture of hydrogen and nitrogen gases while the monomer was introduced into the downstream. Deposition of SiN x films were initiated by hydrogen radicals since no film deposition was observed in the absence of hydrogen radicals. The deposited films were contaminated with a small amount of carbon atoms for the substrate temperature over 4008C. It is proposed that at the initial step, Si^N or N^C bonds of the monomer are broken by hydrogen radicals. Furthermore, N atoms in the films are assumed to be originated from the plasma.