Deposition parameters studies of silicon nitride films prepared by plasma-enhanced CVD process using silane-ammonia
β Scribed by K. R. Lee; K. B. Sundaram; D. C. Malocha
- Publisher
- Springer US
- Year
- 1993
- Tongue
- English
- Weight
- 428 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0957-4522
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π SIMILAR VOLUMES
In a series of two papers we describe the effect of argon dilution of the nitrogen passed through the RF discharge region on the plasma composition, growth rate and some characteristics of silicon nitride films deposited by remove PECVD. In this part we report the results of an emission spectroscopi
Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p