Silicon molecular beam epitaxy
โ Scribed by Dr. Dirk J. Gravesteijn; Dr. Gerjan F. A. van De Walle; Dr. Aart A. van Gorkum
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 338 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0935-9648
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti
The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele