In situ studies of epitaxial silicon gro
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B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernรกndez; A. K. Lees
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Article
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1997
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John Wiley and Sons
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English
โ 297 KB
๐ 1 views
The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele