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Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy

โœ Scribed by T. Suzuki; S. Naritsuka; T. Maruyama; T. Nishinaga


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
312 KB
Volume
38
Category
Article
ISSN
0232-1300

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele