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Mg-Induced Kinetical Changes in the Growth of Cubic and Hexagonal GaN by Molecular Beam Epitaxy

โœ Scribed by Mula, G. ;Daudin, B. ;Peyla, Ph.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
143 KB
Volume
176
Category
Article
ISSN
0031-8965

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The metalorganic vapor phase epitaxial (MOVPE) growth of cubic GaN layers on misoriented GaAs (001) substrates, the faces of which were tilted from (001) toward [1 " 10] or [110] by 4 , was performed in order to investigate the effect of the substrate misorientation on the inclusion of hexagonal pha