Temperature Dependence of the Photorefle
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Behn, U. ;Thamm, A. ;Brandt, O. ;Grahn, H.T.
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Article
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2000
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John Wiley and Sons
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English
โ 101 KB
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The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures, the lineshape is dominated by excitonic transitions and can be reasonably well fitted using the first derivative of a Gaussianbroadened osci