New Concept for ZnTe-Based Homoepitaxial Light-Emitting Diodes Grown by Molecular Beam Epitaxy
β Scribed by Ueta, A. ;Hommel, D.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 127 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
MgSeTe/ZnTe superlattices were proposed as carrier-confinement layers for high-performance yellow-green light emitting diodes (LEDs) on ZnTe substrates for the first time. ZnCdTe/ZnTe LEDs consisting of ZnCdTe quantum well active and ZnTe cladding layers were fabricated by molecular beam epitaxy inc
Bright green and blue light emitting diodes have been developed based on ZnSSe : Te active layer, with high crystal quality and a close lattice-match to GaAs substrate. The green LEDs exhibit a fairly long lifetime (>2000 h) at room temperature, which is attributable to the crystal-hardening effect