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Molecular Beam Epitaxy

✍ Scribed by (Hrsg.) Brian R. Pamplin


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
76 KB
Volume
17
Category
Article
ISSN
0232-1300

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We investigate the growth modes for GaN homoepitaxy. Several parameters have been taken into account: the growth rate, the metal/N ratio value and the substrate temperature. The observation of time variation of the RHEED diffraction pattern and the study of thick samples has permitted the determinat