Molecular-Beam Epitaxy of GaN: A Phase Diagram

✍ Scribed by Adelmann, C. ;Brault, J. ;Martinez-Guerrero, E. ;Mula, G. ;Mariette, H. ;Si Dang, Le ;Daudin, B.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 134 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200112)188:2<575::aid-pssa575>3.0.co;2-#

✦ Synopsis

We investigate the growth modes for GaN homoepitaxy. Several parameters have been taken into account: the growth rate, the metal/N ratio value and the substrate temperature. The observation of time variation of the RHEED diffraction pattern and the study of thick samples has permitted the determination of a phase diagram of the Ga surface coverage during GaN homoepitaxy as a function of III/V ratio and substrate temperature. Furthermore, we address the different GaN surface morphologies obtained in different regions of the phase diagram.