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Silicon interstitial reactions with thermally grown silicon dioxide

โœ Scribed by C. Tsamis; D. Tsoukalas; N. Guillemot


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
283 KB
Volume
22
Category
Article
ISSN
0167-9317

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X-ray photoelectron spectroscopy of ther
โœ G. Hollinger; Y. Jugnet; P. Pertosa; Tran Minh Duc ๐Ÿ“‚ Article ๐Ÿ“… 1975 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 426 KB

At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h