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On the role of protons in thermally grown silicon dioxide films

✍ Scribed by Singh, B. R. ;Tyagi, B. D. ;Marathe, B. R.

Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
207 KB
Volume
19
Category
Article
ISSN
0031-8965

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At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h