✦ LIBER ✦

Current—Voltage Measurements of Thermally Grown SiO2 Films on Etched Silicon Surfaces

✍ Scribed by Ramana, V. V. ;Ravindra, N. M. ;Leahy, M. F.

Publisher: John Wiley and Sons
Year: 1992
Tongue: English
Weight: 539 KB
Volume: 129
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211290129

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Theoretical search for atomic-like state

Theoretical search for atomic-like states of silicon at the surface of thermally grown SiO2films on silicon surfaces

✍ G.F. Cerofolini; P. Belanzoni; G. Giorgi; A. Sgamellotti 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 735 KB

Hopping Conduction in SiO2 Films Thermal

Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon

✍ Krause, H. ;Schell, M. ;Golinsky, H.-Chr. 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 329 KB

Work function measurements during growth

Work function measurements during growth of ultra thin films of SiO2 on characterized silicon surfaces

✍ C. Raisin; E. Vieujot-Testemale; A.Ben Brahim; J.M. Palau; L. Lassabatere 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 389 KB

DC Characteristics of MOS Structures and

DC Characteristics of MOS Structures and Hopping Currents in Thermally Grown SiO2 Films

✍ Krause, H. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 662 KB

Time-dependent dielectric breakbown eval

Time-dependent dielectric breakbown evaluation for rapid-thermally grown SiO2 films formed on submicron-grooved Si surfaces

✍ T. Arakawa; H. Fukuda; Y. Okabe; S. Ohno 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 541 KB

Characterization of silicon carbide thin

Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates

✍ P. Zanola; E. Bontempi; C. Ricciardi; G. Barucca; L.E. Depero 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra