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Ionic current study in thermally grown silicon dioxide films on polycrystalline silicon

✍ Scribed by Salman, E. G. ;Perov, G. V. ;Vertoprakhov, V. N.

Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
425 KB
Volume
99
Category
Article
ISSN
0031-8965

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At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h