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Silicon doping in In0.52Al0.48As layers grown by molecular beam epitaxy: characterization of material properties

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 605 KB
Volume: 40
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(96)01590-5

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