Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures

✍ Scribed by A. Hassine; J. Sapriel; M. Nunez; P. Le Berre; P. Legay; F. Alexandre; G. Post; G. Le Roux

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 328 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90036-1

✦ Synopsis

Ga0.521n0.48 P layers grown by chemical beam epitaxy (CBE) and lattice matched to (100) GaAs were investigated by spectroscopic methods (Raman, BriUouin and ellipsometry). For the first time, the acoustic properties of this crystal were measured, as well as the variation of the real part of the refractive index over a large energy range including the crystal band gap. Selective area epitaxy (SAE) was characterized by combining spatially resolved (1/am) Raman and photoluminescence studies. An In enrichment (maximum, 2.5%) was observed for narrow stripes (less than 5/am) and also when the limits of the mask were approached at distances smaller than 5/am. The advantages of CBE with respect to the other techniques were clearly demonstrated in the case of SAE. Finally, the importance of light scattering for structural and compositional characterizations was demonstrated for GaAs/Ga0521n0.48P superlattices from the measurements of the folded acoustic mode Raman shifts.