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Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy

โœ Scribed by A. Kalbousi; G. Marrakchi; A. Tabata; G. Guillot; G. Halkias; K. Zekentes; A. Georgakilas; A. Cristou


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
361 KB
Volume
22
Category
Article
ISSN
0921-5107

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๐Ÿ“œ SIMILAR VOLUMES


In0.53Ga0.47As>In0.52Al0.48As quantum wi
โœ S. Hiyamizu; Y. Ohno; S. Shimomura ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at