Si-related defects in InGaP/GaAs heterojunction bipolar transistors
โ Scribed by Hisashi Yamada; Noboru Fukuhara; Masahiko Hata
- Book ID
- 103885228
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 199 KB
- Volume
- 401-402
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec
## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.