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δ-doping InGaP/GaAs heterojunction bipolar transistor

✍ Scribed by Jing-Yuh Chen; Shiou-Ying Cheng; Wen-Lung Chang; Wen-Chau Liu


Book ID
114194111
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
324 KB
Volume
53
Category
Article
ISSN
0254-0584

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InGaP/GaAs heterojunction bipolar transi
✍ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec