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Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

✍ Scribed by Ssu-I Fu; Shiou-Ying Cheng; Wen-Chau Liu

Book ID
108268878
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
772 KB
Volume
39
Category
Article
ISSN
0749-6036

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