Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

✍ Scribed by R. Schultheis; N. Bovolon; J.-E. Müller; P. Zwicknagl

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 341 KB
• Volume: 10
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/(sici)1099-047x(200001)10:1<33::aid-mmce5>3.0.co;2-d

✦ Synopsis

This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is demonstrated that the model is fully scalable with respect to emitter area by comparison of simulated and measured S-parameters in the frequency range from DC to 20 GHz. Based on the small signal model, a nonlinear large signal model with the same ⌸-type topology is proposed. It has a small number of parameters and considers self-heating, which is particularly important for HBTs. Parameter extraction is discussed and it is demonstrated by comparison of simulation and measurement that the model can accurately predict the DC characteristics of a HBT for ambient temperatures ranging from 20 to 100ЊC.