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Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistors

✍ Scribed by Masaaki Tomizawa; Tadao Ishibashi; Herbert S. Bennett; Jeremiah R. Lowney

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
868 KB
Volume
35
Category
Article
ISSN
0038-1101

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Modelling of heterojunction bipolar tran
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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is