Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

✍ Scribed by Wei-Chou Wang; Hsi-Jen Pan; Kuo-Hui Yu; Kun-Wei Lin; Jung-Hui Tsai; Shiou-Ying Cheng; Wen-Chau Liu

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 480 KB
• Volume: 29
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0965