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Graded-GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters

✍ Scribed by Michio Ohkubo; Nariaki Ikeda; Takao Ninomiya

Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
518 KB
Volume
11
Category
Article
ISSN
0895-2477

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✦ Synopsis

We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in

the graded base. 0 19% John Wiley & Sons, Inc.

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